1n5817, 1n5818, 1n5819 vishay general semiconductor document number: 88525 revision: 20-aug-07 www.vishay.com 1 schottky barrier rectifiers features ? guardring for overvoltage protection ? very small conduction losses ? extremely fast switching ? low forward voltage drop ? high frequency operation ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in low voltage high frequency inverters, free-wheeling, dc-to-dc converters, and polarity protection applications. mechanical data case: do-204al (do-41) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade polarity: color band denotes the cathode end primary characteristics i f(av) 1.0 a v rrm 20 v, 30 v, 40 v i fsm 25 a v f 0.45 v, 0.55 v, 0.60 v t j max. 125 c do-204al (do-41) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 1n5817 1n5818 1n5819 unit maximum repetitive peak reverse voltage v rrm 20 30 40 v maximum rms voltage v rms 14 21 28 v maximum dc blocking voltage v dc 20 30 40 v maximum non-repetitive peak reverse voltage v rsm 24 36 48 v maximum average forward rectified current 0.375" (9.5 mm) lead length at t l = 90 c i f(av) 1.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 25 a voltage rate of change (rated v r ) dv/dt 10000 v/s storage temperature range t j , t stg - 65 to + 125 c
1n5817, 1n5818, 1n5819 vishay general semiconductor www.vishay.com document number: 88525 revision: 20-aug-07 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) thermal resistance from junction to l ead vertical p.c.b. mounted, 0.375" (9.5 mm) lead length with 1.5 x 1.5" (38 x 38 mm) copper pads ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol 1n5817 1n5818 1n5819 unit maximum instantaneous forward voltage (1) at 1.0 v f 0.450 0.550 0.600 v maximum instantaneous forward voltage (1) at 3.1 v f 0.750 0.875 0.900 v maximum average reverse current at rated dc blocking voltage (1) t a = 25 c t a = 100 c i r 1.0 10 ma typical junction capacitance at 4.0 v, 1.0 mhz c j 125 110 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol 1n5817 1n5818 1n5819 unit typical thermal resistance (1) r ja r jl 50 15 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode 1n5819-e3/54 0.332 54 5500 13" diameter paper tape and reel 1n5819-e3/73 0.332 73 3000 ammo pack packaging figure 1. forward current derating curve 0 0.25 0.5 0.75 0 40 60 20 8 0 100 120 140 1.0 resisti v e or ind u cti v e load 0.375" (9.5 mm) lead length a v erage for w ard c u rrent (a) case temperat u re (c) figure 2. maximum non-repetitive peak forward surge current 1 10 100 0 5 10 15 20 25 30 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
1n5817, 1n5818, 1n5819 vishay general semiconductor document number: 88525 revision: 20-aug-07 www.vishay.com 3 figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics figure 5. typical junction capacitance instantaneo u s for w ard c u rrent (a) 50 10 1.0 0.1 0.01 instantaneo u s for w ard v oltage ( v ) 0 0.4 0.2 1.2 0. 8 0.6 1.4 1.6 1.0 t j = 125 c t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle instantaneo u s re v erse c u rrent (ma) 1.0 10 100 0.01 0.001 0.1 20 0 100 40 60 8 0 percent of rated peak re v erse v oltage ( % ) t j = 125 c t j = 25 c t j = 75 c j u nction capacitance (pf) 10 1 100 100 1000 10 0.1 re v erse v oltage ( v ) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 1 n 5 8 17 figure 6. typical junction capacitance figure 7. typical transient thermal impedance j u nction capacitance (pf) 10 1 100 100 400 10 0.1 re v erse v oltage ( v ) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 1 n 5 8 1 8 & 1 n 5 8 19 0.01 10 1 100 10 100 0.1 0.1 1 t - p u lse d u ration (s) transient thermal impedance (c/ w )
1n5817, 1n5818, 1n5819 vishay general semiconductor www.vishay.com document number: 88525 revision: 20-aug-07 4 package outline dimensions in inches (millimeters) 0.107 (2.7) 0.0 8 0 (2.0) dia. 1.0 (25.4) mi n . 1.0 (25.4) mi n . 0.205 (5.2) 0.160 (4.1) d o -204al (d o -41) 0.034 (0. 8 6) 0.02 8 (0.71) dia.
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